cystech electronics corp. spec. no. : c126e3 issued date : 2015.12.25 revised date : page no. : 1/ 10 mtn10n60be3 cystek product specification n-channel enhancement mode power mosfet mtn10n60be3 bv dss 600v i d @ v gs =10v, t c =25 c 10a r dson(typ) @ v gs =10v, i d =6a 0.59 description the mtn10n60be3 is a n-channel enhancement-mode mosfet, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. the to-220 package is universally preferred for all commercial-industrial applications features ? low on resistance ? simple drive requirement ? low gate charge ? fast switching characteristic ? rohs compliant package applications ? power factor correction ? lcd tv power ? full and half bridge power ordering information device package shipping MTN10N60BE3-0-UB-X to-220 (rohs compliant package) 50 pcs/tube, 20 tubes/box, 4 boxes / carton environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, ub : 50 pcs / tube, 20 tubes/box product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c126e3 issued date : 2015.12.25 revised date : page no. : 2/ 10 mtn10n60be3 cystek product specification symbol outline absolute maximum ratings (t c =25c) parameter symbol limits unit drain-source voltage (note 1) v ds 600 gate-source voltage v gs 30 v continuous drain current @v gs =10v, t c =25 c 10 continuous drain current @v gs =10v, t c =100 c i d 6.3 pulsed drain current (note 2) i dm 40 a single pulse avalanche energy @ l=5mh, i d =10 amps, v dd =50v (note 3) e as 250 repetitive avalanche energy e ar 5 mj maximum temperature for soldering @ lead at 0.063 in(1.6mm) from case for 10 seconds t l 300 maximum temperature for soldering @ package body for 10 seconds t pkg 260 c w total power dissipation (t c =25 ) linear derating factor pd 185 1.48 w/ c operating junction and storage temperature tj, tstg -55~+150 c *drain current limited by maximum junction temperature note : 1 . tj=+25 to +150 . 2 . repetitive rating; pulse width limited by maximum junction temperature. 3. 100% tested by conditions of l=5mh, i as =5a, v gs =10v, v dd =50v mtn10n60be3 to-220 g d s g gate d drain s source
cystech electronics corp. spec. no. : c126e3 issued date : 2015.12.25 revised date : page no. : 3/ 10 mtn10n60be3 cystek product specification thermal data parameter symbol value unit thermal resistance, junction-to-case, max r th,j-c 0.68 thermal resistance, junction-to-ambient, max r th,j-a 62.5 c/w characteristics (tj=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 600 - - v v gs =0v, i d =250 a ? bv dss / ? tj - 0.65 - v/ c reference to 25 c, i d =250 a v gs(th) 2.0 - 4.0 v v ds = v gs , i d =250 a *g fs - 10.9 - s v ds =15v, i d =5a i gss - - 100 na v gs = 30v i dss - - 1 v ds =600v, v gs =0v i dss - - 10 a v ds =480v, v gs =0v, tj=125 c *r ds(on) - 0.59 0.75 v gs =10v, i d =6a dynamic *qg - 43.4 - *qgs - 8.5 - *qgd - 18 - nc i d =10a, v dd =300v, v gs =10v *t d(on) - 19.4 - *tr - 14.4 - *t d(off) - 75.8 - *t f - 18 - ns v dd =300v, i d =10a, v gs =10v, r g =9.1 ciss - 1599 - coss - 159 - crss - 26 - pf v gs =0v, v ds =25v, f=1mhz source-drain diode *v sd - - 1.5 v i s =10a, v gs =0v *i s - - 10 *i sm - - 40 a *trr - 424 636 ns *qrr - 3.2 4.8 c v gs =0v, i f =10a, di f /dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c126e3 issued date : 2015.12.25 revised date : page no. : 4/ 10 mtn10n60be3 cystek product specification typical characteristics typical output characteristics 0 2 4 6 8 10 12 14 16 18 20 0 10203040 50 static drain-source on-resistance vs ambient temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 -75 -50 -25 0 25 50 75 100 125 150 175 t a , ambient temperature(c) r ds(on) , normalized static drain-source on-state resistance 10v,9v,8v,7v v ds , drain-source voltage(v) i d , drain current(a) v gs =4.5v 5v 5.5 v 6v i d =6a, v gs =10v static drain-source on-state resistance vs drain current 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on- state resistance() v gs =10v drain current vs gate-source voltage 0 5 10 15 20 25 30 0246810 v gs , gate-source voltage(v) i d , drain current(a) ta=25c v ds =30v v ds =10v static drain-source on-state resistance vs gate-source voltage 0 1 2 3 4 5 02468 v gs , gate-source voltage(v) r ds(on) , static drain-source on-state resistance() 10 i d =6a ta=25c forward drain current vs source-drain voltage 0.001 0.01 0.1 1 10 100 00.20.40.60.811.21.4 v sd , source drain voltage(v) i f , forward current(a) v gs =0v ta=150c ta=25c
cystech electronics corp. spec. no. : c126e3 issued date : 2015.12.25 revised date : page no. : 5/ 10 mtn10n60be3 cystek product specification typical characteristics(cont.) capacitance vs reverse voltage 10 100 1000 10000 0 5 10 15 20 25 30 v ds , drain-to-source voltage(v) capacitance(pf) ciss coss crss f=1mhz brekdown voltage vs ambient temperature 0.6 0.8 1.0 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 t a , ambient temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v maximum safe operating area 0.01 0.1 1 10 100 1 10 100 1000 v ds , drain-source voltage(v) i d , drain current(a) r ds( on) limited dc 10 s t c =25c, tj(max)=150c v gs =10v, r jc =0.68c/w single pulse 100ms 10ms 1ms 10 0 s gate charge characteristics 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 45 50 qg, total gate charge(nc) v gs , gate-source voltage(v) i d =10a v ds =120v v ds =300v v ds =480v maximum drain current vs case temperature 0 2 4 6 8 10 12 25 50 75 100 125 150 175 t c , case temperature(c) i d , maximum drain current(a) v gs =10v, r jc =0.68c/w threshold voltage vs junction tempearture 0.2 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) v gs(th) , normalized threshold voltage i d =250 a i d =1ma
cystech electronics corp. spec. no. : c126e3 issued date : 2015.12.25 revised date : page no. : 6/ 10 mtn10n60be3 cystek product specification typical characteristics(cont.) forward transfer admittance vs drain current 0.01 0.1 1 10 100 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) ta=25c pulsed v ds =15v single pulse power rating, junction to case 0 200 400 600 800 1000 1200 1400 1600 1800 2000 0.0001 0.001 0.01 0.1 1 10 pulse width(s) power (w) t j(max) =150c t c =25c r jc =0.68c/w transient thermal response curves 0.01 0.1 1 1.e-05 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 t 1 , square wave pulse duration(s) r(t), normalized effective transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r jc (t)=r(t)*r jc 2.duty factor, d=t 1 /t 2 3.t jm -t c =p dm *r jc (t) 4.r jc =0.68 c/w
cystech electronics corp. spec. no. : c126e3 issued date : 2015.12.25 revised date : page no. : 7/ 10 mtn10n60be3 cystek product specification test circuit and waveforms
cystech electronics corp. spec. no. : c126e3 issued date : 2015.12.25 revised date : page no. : 8/ 10 mtn10n60be3 cystek product specification test circuit and waveforms(cont.)
cystech electronics corp. spec. no. : c126e3 issued date : 2015.12.25 revised date : page no. : 9/ 10 mtn10n60be3 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of the package, measured on the package body surface.
cystech electronics corp. spec. no. : c126e3 issued date : 2015.12.25 revised date : page no. : 10/ 10 mtn10n60be3 cystek product specification to-220 dimension marking: 4 style: pin 1.gate 2.drain 3.source 4.drain 3-lead to-220 plastic package cystek package code: e3 device name date code 1 2 3 cys 10n60b *: typical millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 4.400 4.600 0.173 0. 181 e 2.540* 0.100* a1 2.250 2.550 0.089 0.100 e1 4.980 5.180 0.196 0.204 b 0.710 0.910 0.028 0.036 f 2.650 2.950 0.104 0.116 b1 1.170 1.370 0.046 0.054 h 7.900 8.100 0.311 0.319 c 0.330 0.650 0.013 0.026 h 0.000 0.300 0.000 0.012 c1 1.200 1.400 0.047 0.055 l 12.900 13.400 0.508 0.528 d 9.910 10.250 0.390 0.404 l1 2.850 3.250 0.112 0.128 e 8.950 9.750 0.352 0.384 v 7/500 ref 0.295 ref e1 12.650 12.950 0.498 0.510 3.400 3.800 0.134 0.150 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing spec ification or packing method, please cont act your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitab le for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance .
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